P0903BDG PDF Datasheet


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Description

This is 50A, 25V, N-Channel Logic Level Enhancement Mode Field Effect Transistor. NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL VGS TC = 25 °C TC = 100 °C ID IDM IAR L = 0.1mH 2 LIMITS ±20 50 35 200 40 250 8.6 50 30 -55 to 150 275 UNITS V Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 1 A EAS EAR PD Tj, Tstg TL mJ L = 0.05mH TC = 25 °C TC = 100 °C W Operating Junction & Storage Temperature Range Lead Temperature ( , 16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 2.5 62.5 UNITS °C , W 0.6 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1 ELECTRICAL CHARA.