P0550AD PDF Datasheet


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Description

This is N-Channel Enhancement Mode MOSFET. P0550AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 500V RDS(ON) 1.5Ω @VGS = 10V ID 5A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1,2 SYMBOL VDS VGS LIMITS 500 ±30 5 3 15 5 128 89 36 -55 to 150 UNITS V TC = 25 ° C TC = 100 ° C ID IDM IAS A L = 10mH TC = 25 ° C TC = 100 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.4 62.5 UNITS ° C, W Pulse width limited by maximum junction temperature. Limited only by maximum temperature allowed Ver 1.0 1 2012, 4, 16 P0550AD N-Channel Enhancement Mode MOSFET LIMITS MIN 500 2.5 4.5 ±100 25 250 1.35 4 691 VGS = 0V, VDS = 25V, f = 1MH- 93 .