OPE5794 PDF Datasheet
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Description
This is GaAlAs Infrared Emitter. GaAlAs Infrared Emitter
OPE5794
The OPE5794 is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 plastic package and has medium beam angle with lensed package and cup frame DIMENSIONS (Unit:mm)
3.0 3.8 4.6 0.3 5.4
0.8 Max
FEATURES High-output power Medium beam angle Available for pulse operating
23.0 Min
2-¡
0.5 ¨ ¨ 2.0 2.5
APPLICATIONS ¨ Cathode Optical emitters Optical switches Smoke sensors IR remote control IR sound transmission * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device.
MAXIMUM RATINGS Item Symbol Rating Power dissipation PD 80 Forward current IF 60 Pulse forward current IFP 0.8 1 Reverse voltage VR 5.0 Operating temp. Topr. -20~ +70 Storage temp. Tstg. -20~ .