NP100P06PDG PDF Datasheet
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Description
This is MOS FIELD EFFECT TRANSISTOR.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R>
ORDERING INFORMATION
PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p, reel
PACKAGE TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = 4.5 V, ID = 50 A) High current rating: ID(DC) = m100 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 m20 m100 m300 200 1.8 175 55 to +175 64 420
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation .