MTY30N50E PDF Datasheet


Please enter the part number you wish to PDF download in the search bar.


scroll

Description

This is TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E, D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature D TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM ® G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EA.