MMZ09312BT1 PDF Datasheet


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Description

This is Heterojunction Bipolar Transistor. Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2, 2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency, Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MH- such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic package. Typical Performance: VCC1 = VCC2 = VBIAS = 5 Volts, ICQ = 74 mA Frequency 900 MH- 750 MH- 450 MH- Pout (dBm) 24 17.5 29 Gps (dB) 31.5 32.0 33.0 ACPR (dBc) --50.0 --50.0 --40.0 PAE (%) 26.0 15.3 57.0 Test Signal IS--95 CDMA LTE 10, 20 MH- ZigBee MMZ09312BT1 400-1000 MHz, 31.7 dB 29.6 dBm InGaP HBT CASE 2131-01 QFN 3x3 PLASTIC Features Frequency: 400--1000 MH- .