MMBTA14LT1 PDF Datasheet
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Description
This is Darlington Amplifier Transistors. MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA13LT1, D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3 BASE 1
MMBTA13LT1 MMBTA14LT1*
*Motorola Preferred Device
EMITTER 2
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc
CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW, °C °C, W mW mW, °C °C, W °C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Ma.