MMBT5550L PDF Datasheet


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Description

This is High Voltage Transistors. MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features http:, , onsemi.com COLLECTOR 3 1 BASE 2 EMITTER AEC Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb Free, Halogen Free, BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc 1 Vdc 2 SOT 23 (TO 236) CASE 318 STYLE 6 3 MARKING DIAGRAM Collector Base Voltage VCBO x1x M G G 1 Emitter Base Voltage Collector Current Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc mAdc V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Ther.