MJE13003 PDF Datasheet


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Description

This is NPN SILICON TRANSISTOR. MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE 1 unless otherwise specified Test Ic= 1000 Ic= 10 IE= 1000 VCB= 700 VCE= 400 VEB= 9 conditions A mA A V V V IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 8 5 1 1.2 3 5 0.5 2.5 V V V MH- s s MIN 700 400 9 1000 500 1000 40 TYP MAX UNIT V V V A A A VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 0.5 mA IC=1000mA,IB= 250 mA IC=1000mA, IB= 250mA IE= 2000 mA VCE=10V,Ic=100mA f =1MH- IC=1A, IB1=-IB2=0.2A DC current gain(note) HFE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time.