MJ15015 PDF Datasheet
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Description
This is NPN Transistor, 120V, 15A. MJ15015
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
CONDITIONS VBE = 0V
TYP
Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4A,IB1=-IB2=0.4A,VCC=30V
1.5
MAX 200 120 15 180 1.5 2.0 6.0
UNIT V V A A W V V s
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55 -
Tmb 25
MAX 200 120 5 15 7 180 150 150
.