MIP3E3SMY PDF Datenblatt
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Beschreibung
This is Silicon MOS-type integrated circuit. (IPD)
MIP3E3SMY
MOS
-
2.8±0.2 1.5±0.2
Unit : mm
(MIP2ExD
50%
)
10.5±0.5 9.5±0.2 8.0±0.2
6.7±0.3
4.5±0.2 1.4±0.1
15.4±0.3
-
φ 3.7±0.2
1.4±0.1
13.5±0.5 4.2±0.3 Solder Dip (9.3)
2.5±0.2 0.6+0.1 0.2
-
VD VC ID IDP IC Tch Tstg 700 8 1.1 1.7 0.1 150 55 ∼ +150 V V A A A °C °C
0.8±0.1
2.54±0.3 5.08±0.5 1 2 3
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP3E3SMY
-
Control
Drain
S R
Q Q
Max. duty clock
MOSFET S R Q Q
Source
2.8±0.2
: 2003
8
SLB00054AJD
1
MIP3E3SMY
- TC = 25°C ± 3°C
fOSC MAXDC PWM
*
VC = VC(CNT) 0.2 V, VD = 5 V VC = VC(CNT) 0.2 V, VD = 5 V VC = VC(CNT) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V
90 45.0
100 47.5 11
110 50.0
kH- % dB
GPWM
IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) , VC VC(CLP) TSW , TTIM fTIM IC(CHG) VC(CNT)
*
0.2 0.2 0.20 5.4 4.1 0.8 5.7
0.4 0.5 0.55 6.1 4.8 1.3 6.2 4 3
0.7 0.8 1.0.