MIP3E3SMY PDF Datenblatt


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Beschreibung

This is Silicon MOS-type integrated circuit. (IPD) MIP3E3SMY MOS - 2.8±0.2 1.5±0.2 Unit : mm (MIP2ExD 50% ) 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 4.5±0.2 1.4±0.1 15.4±0.3 - φ 3.7±0.2 1.4±0.1 13.5±0.5 4.2±0.3 Solder Dip (9.3) 2.5±0.2 0.6+0.1 0.2 - VD VC ID IDP IC Tch Tstg 700 8 1.1 1.7 0.1 150 55 ∼ +150 V V A A A °C °C 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP3E3SMY - Control Drain S R Q Q Max. duty clock MOSFET S R Q Q Source 2.8±0.2 : 2003 8 SLB00054AJD 1 MIP3E3SMY - TC = 25°C ± 3°C fOSC MAXDC PWM * VC = VC(CNT) 0.2 V, VD = 5 V VC = VC(CNT) 0.2 V, VD = 5 V VC = VC(CNT) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V 90 45.0 100 47.5 11 110 50.0 kH- % dB GPWM IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) , VC VC(CLP) TSW , TTIM fTIM IC(CHG) VC(CNT) * 0.2 0.2 0.20 5.4 4.1 0.8 5.7 0.4 0.5 0.55 6.1 4.8 1.3 6.2 4 3 0.7 0.8 1.0.