ME9435 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is 30V P-Channel Enhancement Mode MOSFET. ME9435
30V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and in-lin power loss that are needed in a very small outline surface mount package.
FEATURES
@VGS=-10V 2. -30V, -4.2A, RDS(ON)=100m @VGS=-4.5V
1. -30V, -5.3A, RDS(ON)=60m
PIN
CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction Temperature
Junction-to-Case Thermal Resistance
Unless Otherwise Noted)
Symbol
VDSS VGSS
10 secs
Steady State
-30 ±20 -5.3 -20 2.5
Unit
V V A A W
TA=.