M28F101 PDF Datasheet
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Description
This is 1 Mb FLASH MEMORY. M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10 s typical ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION Stand-by Current: 100 A max 10,000 ERASE, PROGRAM CYCLES
INTEGRATED ERASE, PROGRAM-STOP TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: 07h
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
32
1
PDIP32 (P)
PLCC32 (K)
TSOP32 (N) 8 x 20 mm
Figure 1. Logic Dia.