M28256 PDF Datasheet
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Description
This is 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection. M28256
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
PRELIMINARY DATA
FAST ACCESS TIME: 90ns at 5V 120ns at 3V SINGLE SUPPLY VOLTAGE: 5V ± 10% for M28256 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cycle ENHANCED END of WRITE DETECTION: Data Polling Toggle Bit STATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY: Endurance >100,000 Erase, Write Cycles Data Retention >10 Years JEDEC APPROVED BYTEWIDE PIN OUT ADDRESS and DATA LATCHED ON-CHIP SOFTWARE DATA PROTECTION
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS) 300 mils
TSOP28 (NS) 8 x13.4mm
Figure 1. Logic Diagram
VCC
DESCRIPTION The M28256 and M28256-Ware 32K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology. Table 1. Signal Names
A0-A14 DQ0-DQ7 W E G VCC VSS Address Input Data Input , Output Write Enable Chip Enable Output Enable Supply Vo.