KTA1266 PDF Datenblatt
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Beschreibung
This is EPITAXIAL PLANAR PNP TRANSISTOR. SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA), hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198.
KTA1266
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
-50 -50 -5 -150 -50
Collector Power Dissipation
625 *PC
400
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
*Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW
UNIT V V V mA mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Base Intrinsic Resistance
ICBO IEBO hFE(1) (Note) hFE(2).