KSP2907A PDF Datasheet


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Description

This is General Purpose Transistor. KSP2907A KSP2907A General Purpose Transistor Collector-Emitter Voltage: VCEO= 60V Collector Power Dissipation: PC (max)=625mW Refer to KSP2907 for graphs TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -60 -5 -600 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage * Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -10 A, IE=0 IC= -10mA, IB=0 IE= -10 A, IC=0 VCB= -50V, IE=0 IC= -0.1mA, VCE= -10V VCE= -10V, IC= -1mA, VCE= -10V , IC= -10mA VCE= -10V, *IC= -150mA VCE= -10V, *IC= -500mA IC=.