KF5N50D PDF Datasheet


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Description

This is N CHANNEL MOS FIELD EFFECT TRANSISTOR. SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC H G F F KF5N50D, DZ N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv, dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS E.