KF12N60F PDF Datasheet
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Description
This is N CHANNEL MOS FIELD EFFECT TRANSISTOR. SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES
VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC
D N N A
KF12N60P, F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF12N60P
O C F
E
G B Q
I K M L J H P
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv, dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
)
RATING SYMBOL KF12N60P VDSS VGSS ID IDP EAS EAR dv, dt PD Tj Tstg 215 1.72 150 -55 150
D N N H
UNIT KF12N60F 600 30 12 7.4 33 450 17 4.5 49.8 0.4 12* 7.4* 33* mJ mJ
B
1 2 3
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B .