K80E08K3 PDF Datasheet
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Description
This is TK80E08K3. Target Specification
TK80E08K3
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS
TK80E08K3
E-Bike, UPS, Inverter
Unit: mm Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 A (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv, dt Tch Tstg Rating 75 75 ±20 80 70 240 200 107 40 20 12 175 55~175 Unit V V V A A A W mJ A mJ V, ns °C °C
DC (Note 1,4) Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv, dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4)
JEDEC JEITA TOSHIBA
TO-220AB SC-46
Weight: 1.9 g (typ..