K4A60DA PDF Datasheet
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Description
This is 600V, 3.5A, N-Channel MOSFET, TK4A60DA. TK4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.5 14 35 158 3.5 3.5
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Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
150 55 to 150
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high .