K3919 PDF Datasheet
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Description
This is MOSFET ( Transistor ) - 2SK3919. DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK)
FEATURES
Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
25 ±20 ±64 ±256 36 1.0 150 55 to +150 27 73
V V A A W W °C °C A mJ
(TO-252)
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Curren.