K3296 PDF Datasheet
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Description
This is MOSFET ( Transistor ) - 2SK3296.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC, DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ)
FEATURES
4.5 V drive available Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 ±20 ±35 ±140 1.5 40 150 55 to +150
V V A A W W °C °C
.