K3151 PDF Datasheet


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Description

This is MOSFET ( Transistor ) - 2SK3151. 2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.4.00 Sep 07, 2005 page 1 of 7 www.t.in 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 ±20 50 200 50 50 250 125 150 55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to s.