K2985 PDF Datenblatt


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Beschreibung

This is MOSFET ( Transistor ) - 2SK2985. 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) 2SK2985 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 70 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 60 V) l Enhancement mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 45 701 45 4.5 150 55~150 Unit V V V A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit The.