K2985 PDF Datenblatt
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Beschreibung
This is MOSFET ( Transistor ) - 2SK2985. 2SK2985
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII)
2SK2985
DC DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
l Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 70 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 60 V) l Enhancement mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain source voltage
Drain gate voltage (RGS = 20 kΩ) Gate source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
60 60 ±20 45 180 45
701
45 4.5 150 55~150
Unit V V V
A
W mJ A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
The.