K2959 PDF Datasheet
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Description
This is Silicon N Channel MOS FET. 2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 7mΩ typ.
4V gate drive devices. High speed switching
Outline
TO 220AB
D
G
S
ADE-208-569C (Z) 4th. Edition Aug 1998
1 2 3
1. Gate 2. Drain(Flange 3. Source
2SK2959
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C
Ratings 30 ±20 50 200 50 75 150 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current
I DSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance
R.