K2929 PDF Datasheet
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Description
This is MOSFET ( Transistor ) - 2SK2929. 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.026 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2929
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 25 100 25 20 34 50 150 55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2929
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 ±20 1.5 11 Typ 0.026 0.045 17 740 380 140 10 160 100 150 0.95 40 Max ±10 .