K2590 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK2590
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control
Outline
TO-220AB
Preliminary
D 123 1. Gate
G 2. Drain (Flange)
3. Source
S
2SK2590
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 200 ±20 7 28 7 50 150 55 to +150
Unit V V A A A W °C °C
2
2SK2590
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
200
Gate to source breakdown voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff volta.