K2012 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is N-Channel Silicon MOSFET. Ordering number:ENN4321B
N-Channel Silicon MOSFET
2SK2012
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK2012]
10.0 3.2
4.5 2.8
3.5 7.2 16.0
18.1 5.6
Specifications
1.6 1.2
0.75 123 2.55 2.55
2.55 2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10 s, duty cycle≤1% Tc=25˚C
Ratings 250 ±30 18 72 2.0 40 150
55 to +150
Unit V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Souce Leakage Current Cutoff Volt.