K1933 PDF Datasheet


Please enter the part number you wish to PDF download in the search bar.


scroll

Description

This is MOSFET ( Transistor ) - 2SK1933. 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 55 to +150 Unit V V A A A W °C °C 2 2SK1933 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 2.0 4.5 Typ 0.9 7 2620 830 320 30 140 285 170 0.9 1600 Max ±10 250 3.0 1.2 Un.