K1358 PDF Datasheet
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Description
This is MOSFET ( Transistor ) - 2SK1358. TOSHIBA
Discrete Semiconductors
2SK1358
Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
Features
Industrial Applications
Unit in mm
Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) High Forward Transfer Admittance - Yfs = 4.0S (Typ.) Low Leakage Current - IDSS = 300 A (Max.) @ VDS = 720V Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range
SYMBOL
VDSS VDGR VGSS ID IDP PD Tch Tstg
RATING
900 900 ±30 9 27 150 150 -55 ~ 150
UNIT
V V V A
W °C °C
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient
SYMBOL
Rth(ch-c) Rth(ch-a)
MAX.
0.833 50
UNIT
°C, W °C, W
T.