K1336 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D 321 1. Source G 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch Tch Tstg Ratings 60 ±20 0.3 1.2 0.3 400 150 55 to +150 Unit V V A A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Sta.