K1165 PDF Datasheet
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Description
This is Silicon N Channel MOS FET. 2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G0914-0200 (Previous: ADE-208-1252)
Rev.2.00 Sep 07, 2005
D
G
1. Gate 2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1165
2SK1166
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS
VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol
Drain to source breakdown voltage
2SK1165 2SK1166
V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I.