K10A50D PDF Datasheet

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Description

This is TK10A50D. TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 10 40 45 264 10 4.5 150 55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature, current, vol.