K07N120 PDF Datasheet
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Description
This is Fast IGBT in NPT-technology. SKW07N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http:, , www.infineon.com, igbt, Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wav.