JANTX2N6766 PDF Datasheet

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Description

This is POWER MOSFET N-CHANNEL. PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv, dt RATED HEXFET TRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-204AA, AE) [REF:MIL-PRF-19500, 543] 200V, N-CHANNEL Product Summary Part Number BVDSS IRF250 200V RDS(on) 0.085Ω ID 30A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv, dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic d.