IXFM50N20 PDF Datasheet


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Description

This is HiPerFET Power MOSFETs. HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv, dt, Low trr, HDMOSTM Family VDSS IXFH, IXFM42N20 IXFH, IXFM, IXFT50N20 IXFH, IXFT58N20 200 V 200 V 200 V ID25 RDS(on) 42 A 60mW 50 A 45mW 58 A 40mW trr 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 42N20 50N20 58N20 42N20 50N20 58N20 42N20 50N20 58N20 Maximum Ratings 200 200 ±20 ±30 42 50 58 168 200 232 42 50 58 30 5 300 -55 ... +150 150 -55 ... +150 V V V V G TO-268 (D3) Case Style (TAB) A A A A A A A A A mJ V, ns W °C °C °C °C S (TAB) TO-204 AE (IXFM) S D G = Gate, S = Source, D = Drain, TAB = Drain G EAR dv, dt PD TJ TJM Tstg TL Md Weight TC = 25°C IS IDM, di, dt 100 A, ms, VDD VDSS, TJ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13, 10 Nm, lb.in. TO-204 = 18 g, TO-247 = 6 g Featur.