IRLM120A PDF Datasheet
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Description
This is HEXFET Power MOSFET. Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.)
IRLM120A
BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv, dt Total Power Dissipation (TC=25 C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1, 8” from case for 5-seconds 300 - 55 to +150
o o o o
Value 100 2.3 1.85
(1)
Units V A A V mJ A mJ V, ns W W, C
o
18 ±20 105 2.3 0.27 6.5 2.7 0.022
(2.