IRGPC40UD2 PDF Datasheet
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Description
This is INSULATED GATE BIPOLAR TRANSISTOR. Previous Datasheet
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PD - 9.808A
IRGPC40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
UltraFast CoPack IGBT
VCES = 600V VCE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 20A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Cla.