IRG7PK35UD1PBF PDF Datasheet


Please enter the part number you wish to PDF download in the search bar.


scroll

Description

This is Insulated Gate Bipolar Transistor. IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A G C C C G E C E G C E Applications Induction heating Microwave ovens Soft switching applications n-channel IRG7PK35UD1PbF TO 247AC G Gate IRG7PK35UD1 EPbF TO 247AD E Emitter C Collector Features Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in parallel operation Environmentally friendly Base part number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Absolute Maximum Ratings Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG7PK35UD1PbF IRG7PK35UD1-EPbF Parameter VCES IC @ TC = 25°C IC @ TC = 1.