IRG4PC50WPBF PDF Datasheet


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Description

This is INSULATED GATE BIPOLAR TRANSISTOR. PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kH- ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to.