IRG4PC50S PDF Datasheet
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Description
This is INSULATED GATE BIPOLAR TRANSISTOR. PD - 91581A
IRG4PC50S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Ma.