IRG4PC50K PDF Datasheet


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Description

This is INSULATED GATE BIPOLAR TRANSISTOR. PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V G E VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI , Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC50K and IRGPC50M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Co.