IRG4PC50F PDF Datasheet


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Description

This is INSULATED GATE BIPOLAR TRANSISTOR. PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features Optimized for medium operating frequencies ( 1-5 kH- in hard switching, >20 kH- in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation M.