IRFR024N PDF Datasheet

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Description

This is Power MOSFET ( Transistor ). PD- 9.1336A PRELIMINARY IRFR, U024N HEXFET® Power MOSFET D l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 55V G S RDS(on) = 0.075Ω ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P ak T O -2 52 A A I-P ak T O -25 1 A A Absolute Maximum Rating.