IRFP048R PDF Datasheet
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Description
This is Power MOSFET ( Transistor ).
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 38 Single
D
FEATURES
60 0.018
Dynamic dV, dt Rating Isolated Central Mounting Hole 175 °C Operating Temperature Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002, 95, EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
TO-247AC
G
S D G S N-Channel MOSFET
ORDERIN.