IRFHE4250DPBF PDF Datasheet
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Description
This is Power MOSFET ( Transistor ). VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.10 13 60
Q2 25 1.35 35 60
V m nC A
Applications
Control and Synchronous MOSFETs for synchronous buck converters
FASTIRFET™ IRFHE4250DPbF
HEXFET® Power MOSFET
Features Control and synchronous MOSFETs in one package Low thermal resistance path to the PCB Low thermal resistance path to the top Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m ) Intrinsic schottky diode with low forward voltage on Q2 RoHS compliant, halogen-free MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits Increased power density Increased power density Increased power density results in Lower switching losses Lower conduction losses Lower switching losses Environmentally friendlier Increased reliability
Base part number
IRFHE4250DPbF
Package Type
Dual PQFN 6mm x 6mm
Standard Pack
Form Tape and Reel
Quantity 4000
Orderable Part Number IRFHE4250DTRPbF
Absolute Maximum Ratings
VGS ID.