IRFF9130 PDF Datasheet

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Description

This is -6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET. IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511. Features -6.5A, -100V rDS(ON) = 0.300Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9130 PACKAGE TO-205AF BRAND IRFF9130 G S NOTE: When ordering, include the entire.