IRF9640 PDF Datasheet
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Description
This is 11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs. IRF9640, RF1S9640SM
Data Sheet July 1999 File Number
2284.2
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon-gate power eld-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17522.
Features
11A, 200V rDS(ON) = 0.500Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF9640.