IRF9410 PDF Datasheet

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Description

This is Power MOSFET(Vdss=30V/ Rds(on)=0.030ohm). PD - 9.1562A PRELIMINARY l l l l l l IRF9410 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D D VDSS = 30V RDS(on) = 0.030Ω 3 6 4 5 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile, smaller equivalent: IRF7603 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple device.