IRF840B PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is 500V N-Channel MOSFET. IRF840B, IRFS840B
February 2005
IRF840B, IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv, dt capability
D
GD S
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
.